Experience
3 years
Teachings
Basic Electronics,, Analog Electronics,, Digital Electronics, ,EM theory and wave propagation (Antenna),, Circuit Theory,, Microprocessor & Microcontroller., Microelectronics Technology.
Education
M.Tech (JU),
PhD (IIT Kharagpur)
Contact Address :
NIT Sikkim,
Barfung Block,
Ravangla,
postcode - 737139
International Journals
- Som, Arnab, and Sanjay Kumar Jana. "Device and circuit level performance assessments of gate engineered Ge/GaAs heterojunction doping less TFET." International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (2024): e3175. (IF=1.6).
- Som, Arnab, and Sanjay Kumar Jana. "Performance Assessments of Gate Engineered Dopingless Schottky Tunnel MOSFET in Presence of Interfacial Trap Charges." Silicon (2023): 1-14. (IF=3.4).
- Maity, Subhanil, and Sanjay Kumar Jana. "Design of a Power-Performance-Area (PPA) Optimized MOS Current Mode Logic Pre-scaler." Circuits, Systems, and Signal Processing (2023): 1-16. (IF=2.2).
- Gupta, Priti, and Sanjay Kumar Jana. "Design of a Configurable Third-Order G m-C Filter Using QFG and BD-QFG MOS-Based OTA for Fast Locking Speed PLL." Journal of Circuits, Systems and Computers 32.03 (2023): 2350040. (IF=1.278).
- Pradhan, Nigidita, and Sanjay Kumar Jana. "Improved phase noise performance of PFD/CP operating in 1.5 MHz-4.2 GHz for phase-locked loop application." Circuits, Systems, and Signal Processing 41.12 (2022): 6651-6671. (IF=2.2).
- Das, Keshab, Anup Dandapat, and Sanjay Kumar Jana. "Design of a 1.29-1.61 GHz LC-VCO with Improved Phase Noise and Figure-of-Merit (FoM T) for GPS and Satellite Navigation." Journal of Circuits, Systems and Computers 31.16 (2022): 2250274. (IF=1.278).
- Gupta, Priti, and Sanjay Kumar Jana. "Design of DTMOS based third-order G m-C filter for fast locking PLL." Analog Integrated Circuits and Signal Processing 113.1 (2022): 105-117. (IF=1.4).
- Pradhan, Nigidita, and Sanjay Kumar Jana. "Design of PFD with free dead zone and minimized blind zone for high speed PLL application." International Journal of Electronics (2022): 1-19. (IF=1.45).
- Gupta, Priti, and Sanjay Kumar Jana. "Design of High Gain Folded Cascode OTA-Based Transconductance-Capacitance Loop Filter for PLL Applications." Journal of Circuits, Systems and Computers 30.14 (2021): 2150263. (IF=1.278).
- Maity, S., Jana, S. K., Som, I., & Bhattacharyya, T. K. (2021). Power and area‐efficient static current mode logic frequency divider in 180‐nm complementary metal‐oxide‐semiconductor technology. International Journal of Circuit Theory and Applications, 49(8), 2396-2410. (IF=2.378).
- Pradhan, Nigidita, and Sanjay Kumar Jana. "Design of phase frequency detector with improved output characteristics operating in the range of 1.25 MHz-3.8 GHz." Analog Integrated Circuits and Signal Processing 107.1 (2021): 101-108. (IF=1.4).
- Das, Palash, Sanjay Kumar Jana, Nripendra N. Halder, S. Mallik, S. S. Mahato, A. K. Panda, Peter P. Chow, and Dhrubes Biswas. "An Alternative X-ray Diffraction Analysis for Comprehensive Determination of Structural Properties in Compositionally Graded Strained AlGaN Epilayers." Electronic Materials Letters 14 (2018): 784-792. (IF=3.15).
- S Ghosh, S Das, SM Dinara, A Bag, A Chakraborty, P Mukhopadhyay, Sanjay Kumar Jana, D Biswas. "Off-state leakage and current collapse in AlGaN/GaN HEMTs: a virtual gate induced by dislocations." IEEE Transactions on Electron Devices 65.4 (2018): 1333-1339. (IF=3.22).
- Dinara, Syed Mukulika, Saptarsi Ghosh, Sanjay Kr Jana, Shubhankar Majumdar, Dhrubes Biswas, and Sekhar Bhattacharya. "Analysis of strain induced carrier confinement with varying passivation thickness of the Al0. 3Ga0. 7N/GaN heterostructure with graded AlxGa1-xN buffer on Si (111) substrate." Journal of Vacuum Science & Technology B 35, no. 5 (2017). (IF=2.9).
- Ghosh, Saptarsi, Syed M. Dinara, Mihir Mahata, Subhashis Das, Partha Mukhopadhyay, Sanjay Kumar Jana, and Dhrubes Biswas. "On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs." physica status solidi (a) 213, no. 6 (2016): 1559-1563. (IF=2.17).
- Chakraborty, Apurba, Saptarsi Ghosh, Partha Mukhopadhyay, Sanjay K. Jana, Syed Mukulika Dinara, Ankush Bag, Mihir K. Mahata et al. "Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure." Electronic Materials Letters 12 (2016): 232-236. (IF=3.151).
- Jana, Sanjay Kr, Saptarsi Ghosh, Syed Mukulika Dinara, Mihir Mahata, Soumen Das, and Dhrubes Biswas. "Structural, optical, and transport properties of AlGaN/GaN and AlGaN/InGaN heterostructure on sapphire grown by plasma assisted molecular beam epitaxy." Journal of Vacuum Science & Technology B 33, no. 4 (2015). (IF=2.9).
- Bag, Ankush, Rahul Kumar, Partha Mukhopadhyay, Mihir K. Mahata, Apurba Chakraborty, Saptarsi Ghosh, Sanjay K. Jana, and Dhrubes Biswas. "Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening." Electronic Materials Letters 11 (2015): 707-716. (IF=3.15).
- Dinara, Syed Mukulika, Sanjay Kr Jana, Saptarsi Ghosh, Partha Mukhopadhyay, Rahul Kumar, Apurba Chakraborty, Sekhar Bhattacharya, and Dhrubes Biswas. "Enhancement of two-dimensional electron gas concentrations due to Si3N4 passivation on Al0. 3Ga0. 7N/GaN heterostructure: strain and interface capacitance analysis." AIP Advances 5, no. 4 (2015). (IF=1.69).
- Kumar, Rahul, P. Mukhopadhyay, A. Bag, S. Kr Jana, A. Chakraborty, S. Das, M. Kr Mahata, and D. Biswas. "Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness." Applied Surface Science 324 (2015): 304-309. (IF=6.7).
- Das, Palash, Nripendra N. Halder, Rahul Kumar, Sanjay Kr Jana, Sanjib Kabi, Boris Borisov, Amir Dabiran, Peter Chow, and Dhrubes Biswas. "Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility." Electronic Materials Letters 10 (2014): 1087-1092.(IF=3.15).
- Mahata, Mihir Kumar, Saptarsi Ghosh, Sanjay Kumar Jana, Apurba Chakraborty, Ankush Bag, Partha Mukhopadhyay, Rahul Kumar, and Dhrubes Biswas. "Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer." AIP Advances 4, no. 11 (2014). (IF=1.69).
- Ghosh, Saptarsi, Syed Mukulika Dinara, Partha Mukhopadhyay, Sanjay K. Jana, Ankush Bag, Apurba Chakraborty, Edward Yi Chang, and Dhrubes Biswas. "Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors." Applied Physics Letters 105, no. 7 (2014). (IF=3.97).
- Jana, Sanjay Kumar, Partha Mukhopadhyay, Sanjib Kabi, Nripendra N. Halder, Ankush Bag, Saptarsi Ghosh, and D. Biswas. "Growth and characterization of self-assembled InAs quantum dots on Si (100) for monolithic integration by MBE." IEEE Transactions on Nanotechnology 13, no. 5 (2014): 917-925. (IF=2.96).
- Ghosh, Saptarsi, Ankush Bag, Sanjay K. Jana, Partha Mukhopadhyay, Syed Mukulika Dinara, Sanjib Kabi, and Dhrubes Biswas. "An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs." Solid-state electronics 96 (2014): 1-8. (IF=1.91).
- Jana, Sanjay Kumar, Partha Mukhopadhyay, Saptarsi Ghosh, Sanjib Kabi, Ankush Bag, Rahul Kumar, and D. Biswas. "High-resolution X-ray diffraction analysis of AlxGa1− xN/InxGa1− xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations." Journal of Applied Physics 115, no. 17 (2014). (IF=2.87).
Conferences:
12. Sanjay Kr. Jana, Saptarsi Ghosh, Syed Mukulika Dinara, Apurba Chakraorty, and D. Biswas, "Comparative HRXRD analysis of GaN/AlGaN heterostructure on Al2O3 and Si (111) substrate grown by PAMBE" Oral, in MRS FALL 2014. Boston, USA.
13. Syed Mukulika Dinara,Sanjay Kr. Jana ,Saptarsi Ghosh ,Subhashis Das,Partha Dislocation Density before and after a-Si3N4 Passivation on Al0.3Ga0.7N/GaN Heterostructure" MRS Fall Meeting & Exhibits, Boston, USA, Nov, 30-December 5th 2014.
14. N. N. Halder, S. Kr. Jana, P. Biswas, D. Biswas and P. Banerji, "Fabrication of n-ZnO/p-GaAs heterojunction and prediction of its luminescence based on photoluminescence study", Physics of Semiconductor Devices, DOI: 10.1007/978-3-319-03002-9_210, 2014, pp. 815.
15. N. N. Halder, S. Kr. Jana, P. Biswas, P. Banerji, D. Biswas, "Photoluminescence Study Based Prediction On Visible Luminescence From n-Zno/p-GaAs Heterojunction", AIP Conf. Proc. 2014.
16. Mihir Kr. Mahata, S. Ghosh, S. Kr. Jana, A. Chakraborty,P. Mukhopadhyay, S. M. Dinara, R. Kumar, S. Das, A. Bag and D.Biswas, "Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE," IEEE TechSym 2014 Conference in India, 2014.
17. Saptarsi Ghosh, Ankush Bag, Partha Mukhapadhay, Syed Mukulika Dinara, Sanjay K. Jana, Sanjib Kabi, and Dhrubes Biswas, "Threading Dislocations in GaN HEMTs on Silicon: Origin of Large Time Constant Transients?" CS MANTECH Conference, May 19th - 22nd, 2014, Denver, Colorado, USA
18. Ankush Bag, Partha Mukhopadhyay, Saptarsi Ghosh, Palash Das, Rahul Kumar, Sanjay Kr. Jana, Sanjib Kabi, Dhrubes Biswas , "Effect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Study" Physics of Semiconductor Devices, pp- 81-83, January, 2014.
19. Partha Mukhapadhya, Rahuk Kumar, Ankush Bag, S. Ghosh, S. Kr. Jana, S. Kabi & D. Biswas, "Effect of Growth Temperature Variation on Crystalline Quality of AlGaAs/InGaAs Hetero-interface" International Conference on Molicular Beam Epitaxy, 2014, Flagstaff, Arozona, USA, 09/2014
20. S. Kr. Jana, S. Ghosh, S. M. Dinara, T. D. Das and D. Biswas, "Strain Effects on Band Structure of Wurtzite InGaN/GaN Quantum Well on Si Substrate" ICMST 2012, Kottyam, Kerala, India, June 2012.
21. S. Ghosh, S. Rathi, P. Mukhopadhyay, S. Kr. Jana, D. Biswas, "An Analytical Charge Based Drain Current Model for Insulated Gate Undoped AlGaN/GaN Heterostructure," ICAET-2012, Nagapattinam, India, 2012.
Biodata
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skjnit@nitsikkim.ac.in 
+91 9476102775