|Name||Dr. Sanjay Kumar Jana|
|Designation||Assistant Professor |
|Academic Qualification||M.Tech (JU),|
PhD (IIT Kharagpur)
|Areas of Interest||Growth, characterization and Fabribication of III-V based high electron mobility transistor (HEMT) and LED on Si substrate. |
Main research interest in Growth by MBE and MOCVD and characterization by HRXRD, ECV, Hall and PL.
|Work Experience||3 years|
EM theory and wave propagation (Antenna),
Microprocessor & Microcontroller.
|List of Publications||Journals:|
1. Sanjay Kr. Jana, Saptarsi Ghosh, Syed Mukulika Dinara, Mihir Mahata, Soumen Das and Dhrubes Biswas, "Structural, Optical and Transport Properties of AlGaN/GaN and AlGaN/InGaN Heterostructure on Sapphire Grown by Plasma Assisted Molecular Beam Epitaxy" J. Vac. Sci. Technol. B, Vol. 33, No. 4,pp- 041206, 2015.
2. Sanjay Kr. Jana, Partha Mukhopadhyay, Member IEEE, Sanjib Kabi, Nripendra N. Halder, Ankush Bag, Saptarsi Ghosh and D. Biswas, Senior Member IEEE, "Growth and Characterization of Self Assembled InAs Quantum Dots on Si (100) for Monolithic Integration by MBE", ), IEEE Transactions on Nanotechnology, Vol. 13, No. 5, pp- 917-925 Sept. 2014.
3. Sanjay Kr. Jana, Partha Mukhopadhyay, Saptarsi Ghosh, Sanjib Kabi, Ankush Bag, Rahul Kumar, and D.Biswas, "High-resolution X-ray diffraction analysis of AlxGa1-xN/InxGa1-xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observation" J. Appl. Phys. 115, 174507, 2014.
4. Saptarsi Ghosh, Syed Mukulika Dinara, Partha Mukhopadhyay, Sanjay Kr. Jana, Ankush Bag, Apurba Chakraborty, Edward Yi Chang, Sanjib kabi, and Dhrubes Biswas "Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors" Appl. Phys. Lett. 105, 073502, 2014.
5. Saptarsi Ghosh, Ankush Bag, Sanjay Kr. Jana, Partha Mukhopadhyay, Syed Mukulika Dinara, Sanjib Kabi, Dhrubes Biswas, "An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs," Solid-State Electronics, 96 1-8, 2014.
6. Ankush Bag, Rahul Kumar, Partha Mukhopadhyay, Mihir K. Mahata, Apurba Chakraborty, Saptarsi Ghosh, Sanjay Kr. Jana, Dhrubes Biswas "Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening," Electron. Mater. Lett, Electron. Mater. Lett., Vol. 11, No. 4 pp. 707-716, (2015),
7. Palash Das, Nripendra N. Halder, Rahul Kumar, Sanjay Kr. Jana, Sanjib Kabi, Boris Borisov, Amir Dabiran, Peter Chow, and Dhrubes Biswas "Graded Barrier AlGaN/AlN/GaN Heterostructure for Improved 2DEG Carrier Concentration and Mobility," Electron. Mater. Lett., Vol. 10, No. 6 , pp. 1087-1092, 2014.
8. Rahul Kumar, P. Mukhopadhyay, A. Bag, Sanjay. Kr. Jana, A. Chakraborty, S. Das, M. K. Mahata, and D. Biswas, "Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness" Appl. Surf. Sci, 324, pp-304-309, 2015.
9. Syed Mukulika Dinara, Sanjay Kr. Jana, Saptarsi Ghosh, Partha Mukhopadhyay, Rahul Kumar, Apurba Chakraborty, Sekhar Bhattacharya, and Dhrubes Biswas, "Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/ GaN heterostructure: strain and interface capacitance analysis", AIP ADVANCES 5, 047136 (2015)
10. Mihir Kumar Mahata, Saptarsi Ghosh, Sanjay Kr. Jana, Apurba Chakraborty, Ankush Bag, Partha Mukhopadhyay, Rahul Kumar, and Dhrubes Biswas, "Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer," AIP Advances, 4, 117120, (2014)
11. Sanjay Kr. Jana, Saptarsi Ghosh, Syed Mukulika Dinara, Apurba Chakraorty, and D. Biswas, "Comparative HRXRD analysis of GaN/AlGaN heterostructure on Al2O3 and Si (111) substrate grown by PAMBE," MRS Proceedings / Volume 1754 / 2015, DOI: http://dx.doi.org/10.1557/opl.2015.401
12. Sanjay Kr. Jana, Saptarsi Ghosh, Syed Mukulika Dinara, Apurba Chakraorty, and D. Biswas, "Comparative HRXRD analysis of GaN/AlGaN heterostructure on Al2O3 and Si (111) substrate grown by PAMBE" Oral, in MRS FALL 2014. Boston, USA.
13. Syed Mukulika Dinara,Sanjay Kr. Jana ,Saptarsi Ghosh ,Subhashis Das,Partha Dislocation Density before and after a-Si3N4 Passivation on Al0.3Ga0.7N/GaN Heterostructure" MRS Fall Meeting & Exhibits, Boston, USA, Nov, 30-December 5th 2014.
14. N. N. Halder, S. Kr. Jana, P. Biswas, D. Biswas and P. Banerji, "Fabrication of n-ZnO/p-GaAs heterojunction and prediction of its luminescence based on photoluminescence study", Physics of Semiconductor Devices, DOI: 10.1007/978-3-319-03002-9_210, 2014, pp. 815.
15. N. N. Halder, S. Kr. Jana, P. Biswas, P. Banerji, D. Biswas, "Photoluminescence Study Based Prediction On Visible Luminescence From n-Zno/p-GaAs Heterojunction", AIP Conf. Proc. 2014.
16. Mihir Kr. Mahata, S. Ghosh, S. Kr. Jana, A. Chakraborty,P. Mukhopadhyay, S. M. Dinara, R. Kumar, S. Das, A. Bag and D.Biswas, "Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE," IEEE TechSym 2014 Conference in India, 2014.
17. Saptarsi Ghosh, Ankush Bag, Partha Mukhapadhay, Syed Mukulika Dinara, Sanjay K. Jana, Sanjib Kabi, and Dhrubes Biswas, "Threading Dislocations in GaN HEMTs on Silicon: Origin of Large Time Constant Transients?" CS MANTECH Conference, May 19th - 22nd, 2014, Denver, Colorado, USA
18. Ankush Bag, Partha Mukhopadhyay, Saptarsi Ghosh, Palash Das, Rahul Kumar, Sanjay Kr. Jana, Sanjib Kabi, Dhrubes Biswas , "Effect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Study" Physics of Semiconductor Devices, pp- 81-83, January, 2014.
19. Partha Mukhapadhya, Rahuk Kumar, Ankush Bag, S. Ghosh, S. Kr. Jana, S. Kabi & D. Biswas, "Effect of Growth Temperature Variation on Crystalline Quality of AlGaAs/InGaAs Hetero-interface" International Conference on Molicular Beam Epitaxy, 2014, Flagstaff, Arozona, USA, 09/2014
20. S. Kr. Jana, S. Ghosh, S. M. Dinara, T. D. Das and D. Biswas, "Strain Effects on Band Structure of Wurtzite InGaN/GaN Quantum Well on Si Substrate" ICMST 2012, Kottyam, Kerala, India, June 2012.
21. S. Ghosh, S. Rathi, P. Mukhopadhyay, S. Kr. Jana, D. Biswas, "An Analytical Charge Based Drain Current Model for Insulated Gate Undoped AlGaN/GaN Heterostructure," ICAET-2012, Nagapattinam, India, 2012.
|Membership of Professional Bodies|
|Office Address||NIT Sikkim, |
postcode - 737139